Monolayer Graphene Film on Si-SiO2- 1″ X 1″

$299.00

Monolayer Graphene Film on Si-SiO2- 1″ X 1″ are the subject of intense scientific research due to their unique electronic properties and have potential applications in microelectronics applications micro- and nano-electromechanical systems (MEMS and NEMS), in field effect transistors (FETs), and in  chemical and biological sensors among others.

Description

Monolayer Graphene Film on Si-SiO2- 1″ X 1″

Our Monolayer Graphene Film on Si-SiO2- 1″ X 1″ is grown on a 50 micron-thick copper foil that is coated with single atomic layer of graphene which is deposited via chemical vapor deposition (CVD). For products on Si-SiO2 substrates, it is transferred to the substrate using a wet transfer process. Our Monolayer graphene films have the right mix of small size and cost effectiveness to kick start your R&D projects. This product is ideal for R&D departments and universities.

Graphene Film

Transparency: > 97%

Coverage: > 95%

Thickness (theoretical): 0.345 nm

FET Electron Mobility on Al2O3: 2000 cm2/Vs

FET Electron Mobility on SiO2/Si: 4000 cm2/Vs

Sheet Resistance: 580±50 Ohms/sq (1cm x 1cm)

Grain size: Up to 10 μm

Substrate SiO2/Si

Dry Oxide Thickness: 300 nm (+/-5%)

Type/Dopant: P/Bor

Orientation: <100>

Resistivity: <0.005 Ohm·cm

Thickness: 525 +/- 20 μm Front surface:

Single Side Polished Back Surface: Etched

Particles: <10@0.3 μm

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