Bilayer Graphene Film Si-SIO2 -10mm X 10mm


Bilayer Graphene Films-Si-SiO2 – 15mm X 15mm are the subject of intense scientific research due to their unique electronic properties and have potential applications in microelectronics applications micro- and nano-electromechanical systems (MEMS and NEMS), in field effect transistors (FETs), and in  chemical and biological sensors among others. Bilayer films have lower resistivity compared to monolayer films.


Bilayer Graphene Film Si-SIO2 – 10mm X 10mm

Our Bilayer Graphene Film Si-SIO2 – 10mm X 10mm is grown on a 50 micron-thick copper foil that is coated with two atomic layer of graphene which is deposited via chemical vapor deposition (CVD). For products on Si-SiO2substrates, it is transferred to the substrate using a wet transfer process. A bilayer Graphene Film-Si-SiO2 – 10mm X 10mm is flexible allowing for its use in flexible electronics, a growing field. Our Bilayer graphene films 4 pack has the right mix of small size and cost effectiveness to kick start your R&D projects.

Graphene Film

Transparency: > 97%

Coverage: > 95%

Thickness (theoretical): 0.345 nm

FET Electron Mobility on Al2O3: 2000 cm2/Vs

FET Electron Mobility on SiO2/Si: 4000 cm2/Vs

Sheet Resistance: 580±50 Ohms/sq (1cm x 1cm)

Grain size: Up to 10 μm

Substrate SiO2/Si

  • Dry Oxide Thickness: 300 nm (+/-5%)
  • Type/Dopant: P/Bor
  • Orientation: <100>
  • Resistivity: <0.005 Ohm·cm
  • Thickness: 525 +/- 20 μm
  • Front surface: Single Side Polished
  • Back Surface: Etched
  • Particles: <10@0.3 μm

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